Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

被引：334

作者：

Nakamura, S

Senoh, M

Nagahama, S

Iwasa, N

Yamada, T

Matsushita, T

Sugimoto, Y

Kiyoku, H

机构：

[1] Dept. of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 11期

关键词：

D O I：

10.1063/1.118593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The continuous-wave (cw) operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 27 h. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively, The threshold current density was 3.6 kA/cm(2). Longitudinal modes with a mode separation of 0.042 nm were observed under cw operation at RT. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed between adjacent quantum well or quantum dot subbands, The carrier lifetime and the threshold carrier density were estimated to be 10 ns and 2 x 10(20)/cm(3), respectively. (C) 1997 American Institute of Physics.

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页码：1417 / 1419

页数：3

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