Swift heavy ion induced modification of Si/C60 multilayers

被引：0
|
作者：
Srivastava, SK
Kabiraj, D
Schattat, B
Carstanjen, HD
Avasthi, DK
机构：
[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[2] Nucl Sci Ctr, New Delhi 110067, India
[3] Univ Stuttgart, Inst Strahlenphys, D-70569 Stuttgart, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 219卷
关键词：
SHI; thermal spike; SiC; HRBS;
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Modifications induced by 120 and 350 MeV An ions at the interfaces of a Si/C-60 multilayer system have been investigated. High resolution Rutherford backscattering spectrometry using 2 MeV N+ ions and detecting N3+ backscatters from Si was performed for characterization. A significant smearing out of the peaks as a consequence of mixing of Si and C atoms across the interfaces is observed, which increases noticeably with depth. The amount of mixing for 350 MeV ions is found to be higher than that for 120 MeV ions and is, thus, dependent on the electronic energy deposited in the samples. The mixing has been inferred to be a result of interdiffusion in a transient molten state. (C) 2004 Elsevier B.V. All rights reserved.
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收藏
页码：815 / 819
页数：5
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