Swift heavy ion induced modification of Si/C60 multilayers

Modifications induced by 120 and 350 MeV An ions at the interfaces of a Si/C-60 multilayer system have been investigated. High resolution Rutherford backscattering spectrometry using 2 MeV N+ ions and detecting N3+ backscatters from Si was performed for characterization. A significant smearing out of the peaks as a consequence of mixing of Si and C atoms across the interfaces is observed, which increases noticeably with depth. The amount of mixing for 350 MeV ions is found to be higher than that for 120 MeV ions and is, thus, dependent on the electronic energy deposited in the samples. The mixing has been inferred to be a result of interdiffusion in a transient molten state. (C) 2004 Elsevier B.V. All rights reserved.