High thermoelectric performance of two-dimensional α-GeTe bilayer

被引:17
作者
Marfoua, Brahim [1 ]
Lim, Young Soo [2 ]
Hong, Jisang [1 ]
机构
[1] Pukyong Natl Univ, Dept Phys, Busan 48513, North Korea
[2] Pukyong Natl Univ, Dept Mat Syst Engn, Busan 48513, North Korea
基金
新加坡国家研究基金会;
关键词
Bilayer alpha-GeTe; Boltzmann approach; Thermoelectric property; Temperature dependency; Carrier type dependency; POWER; FILMS; SB;
D O I
10.1016/j.energy.2020.118693
中图分类号
O414.1 [热力学];
学科分类号
摘要
Study on two-dimensional (2D) materials attracts extensive research interests due to its peculiar physical properties. We calculated the temperature dependence of the thermoelectric property of the 2D alpha-GeTe layer by applying the Boltzmann transport theory and also used the semi-empirical WiedemanneFranz law method. We found that the electronic thermal conductivity from the WiedemanneFranz law was substantially smaller than that found from the Boltzmann transport theory. Thus, from the Boltzmann transport theory, we obtained a maximum ZT of 0.95 in the bilayer structure. We also found that the 2D alpha-GeTe bilayer system exhibits an anomalous temperature and carrier type dependencies. For instance, both n- and p-type systems displayed high ZT of 0.8-0.95 and this value was unchanged in a wide range of temperatures 100-600 K. Overall, the TE efficiency of the bilayer system was insensitive to the wide range of temperature and carrier concentration and also carrier type. Thus, the 2D bilayer alpha- GeTe may show superior TE property, not found in any other 2D materials. (C) 2020 Elsevier Ltd. All rights reserved.
引用
收藏
页数:9
相关论文
共 63 条
[1]   Energy and temperature dependence of relaxation time and Wiedemann-Franz law on PbTe [J].
Ahmad, Salameh ;
Mahanti, S. D. .
PHYSICAL REVIEW B, 2010, 81 (16)
[2]   Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals [J].
Anh Tuan Duong ;
Van Quang Nguyen ;
Duvjir, Ganbat ;
Van Thiet Duong ;
Kwon, Suyong ;
Song, Jae Yong ;
Lee, Jae Ki ;
Lee, Ji Eun ;
Park, SuDong ;
Min, Taewon ;
Lee, Jaekwang ;
Kim, Jungdae ;
Cho, Sunglae .
NATURE COMMUNICATIONS, 2016, 7
[3]  
[Anonymous], 2001, WIEN 2 K AUGMENTED P
[4]   A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the Ti0.3Zr0.35Hf0.35NiSn Half-Heusler Alloy [J].
Appel, O. ;
Gelbstein, Y. .
JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (06) :1976-1982
[5]   Cooling, heating, generating power, and recovering waste heat with thermoelectric systems [J].
Bell, Lon E. .
SCIENCE, 2008, 321 (5895) :1457-1461
[6]   High-performance bulk thermoelectrics with all-scale hierarchical architectures [J].
Biswas, Kanishka ;
He, Jiaqing ;
Blum, Ivan D. ;
Wu, Chun-I ;
Hogan, Timothy P. ;
Seidman, David N. ;
Dravid, Vinayak P. ;
Kanatzidis, Mercouri G. .
NATURE, 2012, 489 (7416) :414-418
[7]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[8]   3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals [J].
Chang, Cheng ;
Wu, Minghui ;
He, Dongsheng ;
Pei, Yanling ;
Wu, Chao-Feng ;
Wu, Xuefeng ;
Yu, Hulei ;
Zhu, Fangyuan ;
Wang, Kedong ;
Chen, Yue ;
Huang, Li ;
Li, Jing-Feng ;
He, Jiaqing ;
Zhao, Li-Dong .
SCIENCE, 2018, 360 (6390) :778-782
[9]   High thermoelectric performance of the distorted bismuth(110) layer [J].
Cheng, L. ;
Liu, H. J. ;
Zhang, J. ;
Wei, J. ;
Liang, J. H. ;
Jiang, P. H. ;
Fan, D. D. ;
Sun, L. ;
Shi, J. .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (26) :17373-17379
[10]   Thermoelectric cooling and power generation [J].
DiSalvo, FJ .
SCIENCE, 1999, 285 (5428) :703-706