Growth of germanium crystals from electrodeposited gold in local crucibles

被引：2

作者：

Ratchford, Joshua B. ^{[1
]}

Goldthorpe, Irene A. ^{[2
]}

McIntyre, Paul C. ^{[2
]}

Chidsey, Christopher E. D. ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

关键词：

catalysts; crystal growth from solution; crystal growth from vapour; electrodeposits; elemental semiconductors; germanium; gold; lithography; semiconductor growth; X-ray diffraction; CHEMICAL-VAPOR-DEPOSITION; LIQUID-SOLID GROWTH; SILICON NANOWIRES; WHISKERS;

D O I：

10.1063/1.3074363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a method of using electrodeposited gold catalysts to grow germanium crystals from germane by the vapor-liquid-solid mechanism. Lithographically defined local crucibles in a silicon oxide film on a silicon wafer were used as electrodes for the electrodeposition of gold. At 370 degrees C in the presence of germane, a germanium crystal grew from the gold-germanium eutectic in each local crucible. X-ray diffraction shows that the germanium crystals grew epitaxially from the silicon wafers. The addition of HCl to the reactive gas mixture during germanium crystal growth prevented germanium deposition on the surface of the silicon oxide film.

引用

页数：3

共 20 条

[1]

Barin I., 1997, Thermochemical data of pure substances

[2] QUANTITATIVE STUDY ON GROWTH OF SILICON WHISKERS FROM SILANE AND GERMANIUM WHISKERS FROM GERMANE [J].