Second Generation Small Pixel Technology Using Hybrid Bond Stacking

被引：18

作者：

Venezia, Vincent C. ^{[1
]}

Hsiung, Alan Chih-Wei ^{[1
]}

Yang, Wu-Zang ^{[1
]}

Zhang, Yuying ^{[1
]}

Zhao, Cheng ^{[1
]}

Lin, Zhiqiang ^{[1
]}

Grant, Lindsay A. ^{[1
]}

机构：

[1] OmniVis Technol Inc, Santa Clara, CA 95054 USA

来源：

SENSORS | 2018年 / 18卷 / 02期

关键词：

CIS; BSI; stacked; hybrid-bond; 1.0 mu m; 0.9 mu m; NIR;

D O I：

10.3390/s18020667

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In thiswork, OmniVision's second generation (Gen2) of small-pixel BSI stacking technologies is reviewed. The key features of this technology are hybrid-bond stacking, deeper back-side, deep-trench isolation, new back-side composite metal-oxide grid, and improved gate oxide quality. This Gen2 technology achieves state-of-the-art low-light image-sensor performance for 1.1, 1.0, and 0.9 mu m pixel products. Additional improvements on this technology include less than 100 ppm white-pixel process and a high near-infrared (NIR) QE technology.

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