Low-voltage electroluminescence of europium in zinc oxide thin films

被引：32

作者：

Lima, S. A. M.

Davolos, M. R.

Quirino, W. G.

Legnani, C.

Cremona, M.

机构：

[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, LOEM, BR-22453900 Rio De Janeiro, Brazil

[2] LML, Inst Quym Araraquara, BR-14800970 Araraquara, SP, Brazil

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1063/1.2431566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Europium(III)-containing zinc oxide thin films (1, 5, 8, and 10 at. %) were prepared from Pechini's solution and used as active layers in thin-film electroluminescent devices. By applying a low bias steady state voltage (10-50 V) it was possible to observe electroluminescence of the device. By increasing the rate Eu3+/Zn2+ the relative intensity of emission from the dopand Eu3+ ions increases, while the relative intensity of emission from the zinc oxide (ZnO) matrix decreases. This leads to ZnO:Eu3+ (10 at. %) thin-film electroluminescent devices with low-voltage operation and high pure color.

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页数：3

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