Quantitative study of charge-to-breakdown of thin gate oxide for a p(+)-poly-Si metal oxide semiconductor capacitor (vol 144, pg 698, 1997)

被引：0
|
作者：
Wang, LS
Huang, FS
Lin, MS
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 05期
关键词：
D O I：
10.1149/1.1837698
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：1890 / 1890
页数：1
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