Effects of electrochemistry on surface roughness during chemical-mechanical polishing of copper

被引:15
|
作者
Kulkarni, M. [1 ]
Baker, M. [1 ]
Greisen, D. [1 ]
Ng, D. [1 ]
Griffin, R. [1 ]
Liang, H. [1 ]
机构
[1] Texas A&M Univ, Dept Mech Engn, College Stn, TX 77843 USA
基金
美国国家科学基金会;
关键词
CMP; wear; electrochemical reactions; friction; atomic force microscope;
D O I
10.1007/s11249-006-9134-4
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
In this research, we investigated the electrochemical behavior of copper (Cu) surfaces during chemical-mechanical polishing (CMP) with alumina containing slurries. The variation of pH and the percent of oxidizer were tested against impressed anodic and cathodic potentials. The polarization curves as well as potential and current values were measured in order to investigate the effects of electrochemical interactions during polishing. The polishing performance was evaluated through friction, wear, and surface quality. Surface characterization was conducted using an atomic force microscope. The areas scanned contained surfaces having different post-CMP surface chemistry. In such, the electrochemical, chemical, and mechanical action could be revealed and compared in situ and simultaneously. Research results showed that in acidic environment, the low pH dominated the surface roughness over oxidizer and anodic current. At high pH, however, oxidizer and anodic current played important roles. As a result, an optimized polishing condition was proposed.
引用
收藏
页码:33 / 41
页数:9
相关论文
共 50 条
  • [1] Effects of Electrochemistry on Surface Roughness during Chemical-Mechanical Polishing of Copper
    M. Kulkarni
    M. Baker
    D. Greisen
    D. Ng
    R. Griffin
    H. Liang
    Tribology Letters, 2007, 25 : 33 - 41
  • [2] Lubricating behavior in chemical-mechanical polishing of copper
    Liang, H
    Xu, GH
    SCRIPTA MATERIALIA, 2002, 46 (05) : 343 - 347
  • [3] Surface removal rate in chemical-mechanical polishing
    Xia, X
    Ahmadi, G
    PARTICULATE SCIENCE AND TECHNOLOGY, 2002, 20 (03) : 187 - 196
  • [4] The Role of Pad Topography in Chemical-Mechanical Polishing
    Kim, Sanha
    Saka, Nannaji
    Chun, Jung-Hoon
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2014, 27 (03) : 431 - 442
  • [5] Boron-Based Nanoparticles for Chemical-Mechanical Polishing of Copper Films
    He, Xingliang
    Joo, Sukbae
    Xiao, Huaping
    Liang, Hong
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (01) : P20 - P25
  • [6] Surface qualities after chemical-mechanical polishing on thin films
    Fu, Wei-En
    Lin, Tzeng-Yow
    Chen, Meng-Ke
    Chen, Chao-Chang A.
    THIN SOLID FILMS, 2009, 517 (17) : 4909 - 4915
  • [7] Modeling of surface microtopography evolution in chemical mechanical polishing considering chemical-mechanical synergy
    Yang, Ke
    Huang, Ning
    Di, Hongyu
    Zhou, Ping
    TRIBOLOGY INTERNATIONAL, 2025, 201
  • [8] Pad Scratching in Chemical-Mechanical Polishing: The Effects of Mechanical and Tribological Properties
    Kim, Sanha
    Saka, Nannaji
    Chun, Jung-Hoon
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (05) : P169 - P178
  • [9] Prediction of Surface Roughness in Chemical Mechanical Polishing of FeCrAl
    Guo J.
    Yang Z.
    Zhang P.
    Li L.
    Yu X.
    Pan B.
    Jixie Gongcheng Xuebao/Journal of Mechanical Engineering, 2023, 59 (23): : 310 - 319
  • [10] A study of chemical products formed on sapphire (0001) during chemical-mechanical polishing
    Shi, Xiaolei
    Pan, Guoshun
    Zhou, Yan
    Xu, Li
    Zou, Chunli
    Gong, Hua
    SURFACE & COATINGS TECHNOLOGY, 2015, 270 : 206 - 220