Microstructural control of β-silicon nitride ceramics to improve thermal conductivity

被引:12
作者
Furuya, K
Munakata, F
Matsuo, K
Akimune, Y
Ye, J
Okada, A
机构
[1] Nissan Motor Co Ltd, Mat Res Lab, Yokosuka, Kanagawa 2378523, Japan
[2] Natl Inst Adv Ind Sci & Technol, Smart Struct Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[3] NISSAN ARC Ltd, Res Dept, Yokosuka, Kanagawa 2370061, Japan
关键词
beta-Si3N4 seed crystal; selective grain growth sintering; thermal conductivity;
D O I
10.1023/A:1020660006988
中图分类号
O414.1 [热力学];
学科分类号
摘要
An advanced silicon nitride material with high isotropic thermal conductivity (149 W m(-1) K-1) has been developed. This high thermal conductivity was achieved with a process that combines high-quality seed crystals with a suitable additive system to promote grain growth. In this process, the addition of beta-Si3N4 seed crystals was found to be effective in improving thermal conductivity due to their low defect and impurity concentrations. The seed crystals seem to work as nuclei for controlling grain growth during the sintering process. Controlling the growth of elongated grains so that they do not interact with each other seems important for suppressing the generation of new defects inside the grains.
引用
收藏
页码:873 / 879
页数:7
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