FMR line width and field dependent domain wall mobility in garnets films

被引：3

作者：

Chen, SC ^{[1
]}

Huang, HL ^{[1
]}

机构：

[1] NATL TAIWAN UNIV, DEPT PHYS, TAIPEI, TAIWAN

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1997年 / 33卷 / 05期

关键词：

D O I：

10.1109/20.619635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The domain wall mobility derived from the generalized Landau-Lifshtiz equation taking into account of nonconservation of magnetization modulus yields two distinctly different damping constants. The first one is related to ferromagnetic resonance line width which is independent of in-plane field. The second one is due to the presence of the domain wall and is transverse field dependent. Relative importance of the two constants depends very much on the presence or absence of the in-plane field. The formulation also allows us to do a reasonable estimate the longitudinal susceptibility of the sample. Calculated results are in good agreement with the existing available data.

引用

页码：3978 / 3980

页数：3

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