Another dimension in device characterization

被引：21
作者：
Anand, S [1 ]
机构：
[1] Royal Inst Technol, Dept Elect, Lab Semicond Mat, S-16428 Kista, Sweden
来源：
IEEE CIRCUITS & DEVICES | 2000年 / 16卷 / 02期
关键词：
D O I：
10.1109/101.833030
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：12 / 18
页数：7
相关论文
共 11 条
  • [1] Doping landscapes in the nanometer range by scanning capacitance microscopy
    Anand, S
    Carlström, CF
    Messmer, ER
    Lourdudoss, S
    Landgren, G
    [J]. APPLIED SURFACE SCIENCE, 1999, 144-45 : 525 - 529
  • [2] ANAND S, 1999, P C IND PHOSPH REL M, P67
  • [3] Scanning capacitance microscopy investigations of buried heterostructure laser structures
    Bowallius, O
    Anand, S
    Hammar, M
    Nilsson, S
    Landgren, G
    [J]. APPLIED SURFACE SCIENCE, 1999, 144-45 : 137 - 140
  • [4] DAGATA JA, 1995, SOLID STATE TECHNOL, V38, P91
  • [5] Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices
    Edwards, H
    McGlothlin, R
    San Martin, R
    U, E
    Gribelyuk, M
    Mahaffy, R
    Shih, CK
    List, RS
    Ukraintsev, VA
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (06) : 698 - 700
  • [6] Quantitative two-dimensional dopant profiling of abrupt dopant profiles by cross-sectional scanning capacitance microscopy
    Huang, Y
    Williams, CC
    Wendman, MA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03): : 1168 - 1171
  • [7] Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon
    Kopanski, JJ
    Marchiando, JF
    Lowney, JR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01): : 242 - 247
  • [8] Hydride vapor phase epitaxy revisited
    Lourdudoss, S
    Kjebon, O
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) : 749 - 767
  • [9] SODERSTROM D, IN PRESS J VAC SCI B
  • [10] VANDERVORST W, 1997, FUTURE FAB INT, V1, P287
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