Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls

被引：7
作者：
Kuo, C. W. [1 ]
Lee, Y. C. [1 ]
Fu, Y. K. [1 ]
Tsai, C. H. [1 ]
Wu, M. L. [1 ]
Chi, G. C. [1 ]
Kuo, C. H. [1 ]
Tun, C. J. [2 ]
机构：
[1] Natl Cent Univ, Dept Opt & Photon, Jhongli 32001, Taiwan
[2] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 04期
关键词：
Inverted pyramid sidewalls (IPSs); LED; simulation; wet etching; LIGHT-EMITTING-DIODES; EXTRACTION EFFICIENCY; GAN; SURFACE;
D O I：
10.1109/JSTQE.2009.2015335
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.
引用
收藏
页码：1264 / 1268
页数：5
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