High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient

被引：11

作者：

Kanzaki, Y ^{[1
]}

Kinbara, H ^{[1
]}

Kosugi, H ^{[1
]}

Suda, J ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷

关键词：

MOS; MOSFET; channel mobility; N2O oxidation; (11-20); short-channel effect;

D O I：

10.4028/www.scientific.net/MSF.457-460.1429

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Planar n-channel MOSFETs have been fabricated on 4H-SiC (11-20), (0001) and (000-1) faces by using oxidation in N2O ambient. The relationship between the MOSFET performance and the acceptor concentration (7x10(15)-2x10(17)cm(-3)) of epilayers has been investigated. 4H-SiC (11-20) MOSFETs have shown a high effective channel mobility of 70 cm(2)/Vs at a 2x10(16) cm(-3) doping, and 54 cm(2)/Vs at 2x10(17) cm(-3). Short-channel effects have been also investigated.

引用

页码：1429 / 1432

页数：4

共 5 条

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