A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires

被引：7

作者：

Esposito, A. ^{[1
]}

Luisier, M. ^{[2
]}

Frey, M. ^{[1
]}

Schenk, A. ^{[1
]}

机构：

[1] ETH, Integrated Syst Lab, D ITET, CH-8092 Zurich, Switzerland

[2] Purdue Univ, Network Computat Nanotechnol, W Lafayette, IN 47907 USA

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 03期

基金：

瑞士国家科学基金会;

关键词：

Nonparabolicity; Quantum wires; Tight-binding; Ballistic transport; SCHRODINGER-EQUATION; BAND-STRUCTURE;

D O I：

10.1016/j.sse.2009.01.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a nonparabolicity (NP) model which is able to improve the effective mass approximation (EMA) for computing transfer characteristics of square silicon quantum wire transistors (SQWT) working in the ballistic regime and subjected to bandstructure effects. The model is found to be treatable within the same transport framework as used in a present 3D EMA Poisson-Schrodinger solver thus keeping a comparable time efficiency. A full-band tight-binding (TB) code provides the bandstructures as well as the transfer characteristics related to a series of SQWTs needed for calibrating the NP model. In comparison with the EMA, the threshold voltage (V-T) obtained via the NP model is notably closer to the TB data for all wire widths considered in this work. In addition, the NP model is found to satisfactorily predict the increase of the conduction masses belonging to the unprimed conduction valleys of the TB bandstructure. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：376 / 382

页数：7

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