Decoherence effects in the intraband and interband optical transitions in InAs/GaAs quantum dots

被引:4
|
作者
Ferreira, R. [1 ]
Berthelot, A. [1 ]
Grange, T. [1 ]
Zibik, E. [2 ]
Cassabois, G. [1 ]
Wilson, L. [2 ]
机构
[1] Ecole Normale Super, Lab Pierre Aigrain, F-75005 Paris, France
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
关键词
GROWTH;
D O I
10.1063/1.3130926
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a review of coherence properties of interband and intraband optical transitions in self assembled InAs/GaAs quantun dots. Indeed, recent experimental and theoretical investigations of the optical transitions in both spectral domains have allowed a better understanding of the different phenomena that affects the interaction of confined carriers with light. These studies point out the many different ways the electron-phonon interactions play a role on the optical response of quantum dots. They also stress the primary role of the close environment on the coherence characteristics of quantum dots. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3130926]
引用
收藏
页数:7
相关论文
共 50 条
  • [41] Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
    Vorobjev, LE
    Danilov, SN
    Gluhovskoy, AV
    Zerova, VL
    Zibik, EA
    Panevin, VY
    Firsov, DA
    Shalygin, VA
    Andreev, AD
    Volovik, BV
    Zhukov, AE
    Ledentsov, NN
    Livshits, DA
    Ustinov, VM
    Shernyakov, YM
    Tsatsulnikov, AF
    Weber, A
    Grundmann, M
    Schmidt, SR
    Seilmeier, A
    Towe, E
    Pal, D
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2002, 66 (02): : 231 - 235
  • [42] Optical properties of InAs/GaAs surface quantum dots
    Miao, ZL
    Zhang, YW
    Chua, SJ
    Chye, YH
    Chen, P
    Tripathy, S
    APPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3
  • [43] Optical and Material Characteristics of InAs/GaAs Quantum Dots
    Huang, Sa
    Huang, Pin-Fang
    Feng, Zhe Chuan
    Brown, April
    Lu, Weijie
    NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, AND DEVICES V, 2008, 7039
  • [44] Optical properties of populated InAs/gaAs quantum dots
    Lee, Jia-Ren
    Lu, C.-R.
    Lee, W. I.
    Lee, S. C.
    International Journal of Nanoscience, Vol 2, Nos 4 and 5, 2003, 2 (4-5): : 265 - 269
  • [45] Nominally forbidden transitions in the interband optical spectrum of quantum dots
    Narvaez, Gustavo A.
    Zunger, Alex
    PHYSICAL REVIEW B, 2006, 74 (04)
  • [46] Intraband and interband photocurrent spectroscopy and induced dipole moments of InAs/GaAs(001) quantum dots in n-i-n photodetector structures
    Chen, ZH
    Kim, ET
    Madhukar, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (03): : 1243 - 1246
  • [47] Exciton states and interband optical transitions in InGaN quantum dots
    Shi, JH
    SOLID STATE COMMUNICATIONS, 2002, 124 (09) : 341 - 345
  • [48] Enhanced intraband transitions with strong electric-field asymmetry in stacked InAs/GaAs self-assembled quantum dots
    Sheng, WD
    Leburton, JP
    PHYSICAL REVIEW B, 2001, 64 (15):
  • [49] Intraband relaxation of photoexcited electrons in GaAs/AlGaAs quantum wells and InAs/GaAs self-assembled quantum dots
    Müller, T
    Parz, W
    Schrey, FF
    Strasser, G
    Unterrainer, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S287 - S289
  • [50] Many-body effects on the optical spectra of InAs/GaAs quantum dots
    Heitz, R
    Guffarth, F
    Mukhametzhanov, I
    Grundmann, M
    Madhukar, A
    Bimberg, D
    PHYSICAL REVIEW B, 2000, 62 (24) : 16881 - 16885