Ion implantation of UO2

被引：0

作者：

Meek, TT ^{[1
]}

Haire, MJ ^{[1
]}

Tesmer, J ^{[1
]}

Wetteland, C ^{[1
]}

Hanrahan, R ^{[1
]}

机构：

[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

来源：

47TH INTERNATIONAL SAMPE SYMPOSIUM AND EXHIBITION, VOL 47, BOOKS 1 AND 2: AFFORDABLE MATERIALS TECHNOLOGY-PLATFORM TO GLOBAL VALUE AND PERFORMANCE | 2002年

关键词：

ceramic materials/composites; electrical and electronic; resistivity;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline samples of uranium dioxide (UO2) were implanted with several dopants using ion energies ranging from 140 Kev to 300 Kev. Deposition times ranged from a few seconds to over two hours: Dose levels ranged from 8 x 10(11) to 5 x 10(16) atom/cm(2) at depths of from 0.05 microns to 0.21 microns. Elements implanted were Sb, Te, B, P, S, and Al. The affect of these dopants on the electrical conductivity of UO2 is reported. Sample electrical conductivity was measured using the van der Pauw four-point probe technique. Only unannealed samples were analyzed.

引用

页码：1703 / 1710

页数：8