Preparation, crystal structure, physical properties, and electronic band structure of TlTaS3

被引:0
|
作者
Teske, CL
Bensch, W
Perlov, A
Ebert, H
机构
[1] Univ Kiel, Inst Anorgan Chem, D-24098 Kiel, Germany
[2] Univ Munich, Dept Chem Phys Chem, Munich, Germany
来源
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE | 2002年 / 628卷 / 07期
关键词
thallium tantalum sulphide; crystal structure; properties; electronic band structure;
D O I
10.1002/1521-3749(200207)628:7<1511::AID-ZAAC1511>3.0.CO;2-P
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
TlTaS3 was prepared by applying a sequence of two melting processes with mixtures of Tl2S, Ta, and S having different molar metal to sulphur ratios. TlTaS3 crystallises in space group Puma with a = 9.228(3) Angstrom, b = 3.5030(6) Angstrom, c = 14.209(3) Angstrom, V = 459.3(2) Angstrom(3), Z = 4. The structure is closely related to the NH4CdCl3-type. Characteristic features of the structure are chains of edge-sharing [Ta(+5)S4S2/2](2) double octahedra running along [010]. These columns are linked by Tl+ ions. The Tl+ ion is surrounded by eight S2- anions to form a distorted bi-capped trigonal prism. The Tl+ ions are shifted from the centre of the trigonal prism toward one of the rectangular faces. This is discussed in context with other isostructural compounds. TlTaS3 is a semiconductor. The electronic structure is discussed on the base of band structure calculations performed within the framework of density functional theory.
引用
收藏
页码:1511 / 1516
页数:6
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