ANNEALING OF SCHOTTKY CONTACTS ON 6H-SiC

被引：0

作者：

Machac, Petr ^{[1
]}

Orna, Martin ^{[1
]}

Cichon, Stanislav ^{[1
]}

机构：

[1] Inst Chem Technol, Tech 5, Prague 16628 6, Czech Republic

来源：

ELECTRONIC DEVICES AND SYSTEMS: IMAPS CS INTERNATIONAL CONFERENCE 2011 | 2011年

关键词：

Silicon carbide; Schottky diodes; platinum; density of surface state; SILICON-CARBIDE; BARRIER HEIGHT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The goal of the article was preparation of the Schottky diode on 6H-SiC substrates with low doped epitaxial layer using select metals: platinum, palladium, silver, titanium, chromium, gold, and nickel. The quality of the contacts was compared by values of reverse current at voltage of 30V. Properties of the contacts were optimized by means of annealing in the temperature range from 300 to 700 degrees C. The best results were obtained in the case of platinum. We derived Schottky barriers of tested structures together with a surface state density from forward I-V characteristics. The obtain value was 4x10(13) state/cm(2)eV.

引用

页码：29 / 32

页数：4

共 8 条

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