Magnetotransport properties of Sb2Te3 nanoflake

被引：11

作者：

Huang, Yi-Chi ^{[1
,2
]}

Lee, P. C. ^{[1
,3
]}

Chien, C. H. ^{[1
,3
]}

Chiu, F. Y. ^{[1
]}

Chen, Y. Y. ^{[1
,4
]}

Harutyunyan, SergeyR. ^{[1
,5
]}

机构：

[1] Acad Sinica, Inst Phys, Taipei 115, Taiwan

[2] Natl Cent Univ, Dept Phys, Chungli 320, Taiwan

[3] Natl Tsing Hua Univ, Dep Engn & Syst Sci, Hsinchu 300, Taiwan

[4] Natl Chengchi Univ, Grad Inst Appl Phys, Taipei 106, Taiwan

[5] NASRA, Inst Phys Res, Ashtarak 0203, Armenia

来源：

PHYSICA B-CONDENSED MATTER | 2014年 / 452卷

关键词：

Topological insulator; Magnetoresistance; SdH oscillations; Rashba effect; UNIVERSAL CONDUCTANCE FLUCTUATIONS; BI2SE3;

D O I：

10.1016/j.physb.2014.07.010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Magnetotransport properties of a single crystal Sb2Te3 topological insulator nanoflake with the thickness or 25 nm, synthesized via a vapor phase deposition method, are studied. The mobility and number of carriers are obtained through the Hall resistance measurement data The magnetoresistance shows pronounced weak antilocalization effect. Temperature dependence of the phase coherence length confirms the 2D nature of the observed weak antilocalization effect. The fluctuations in the magnetoresistance are attributed to the combined contribution of the universal conductance fluctuation and the Shubnikov de Haas oscillations of the 2D electron gas. The Shubnikov de Haas oscillations reveal two well defined frequencies ascribed to states with spin up and spin clown polarizations. The Rashba parameter and the energy gap between the two spin polarized subbands have been obtained and were equal to delta=0.75 x 10(-11) eV m and Delta E = 2.4 meV correspondingly. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：108 / 112

页数：5

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