Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

被引：30

作者：

Schmidt, Gordon ^{[1
]}

Mueller, Marcus ^{[1
]}

Veit, Peter ^{[1
]}

Bertram, Frank ^{[1
]}

Christen, Juergen ^{[1
]}

Glauser, Marlene ^{[2
]}

Carlin, Jean-Francois ^{[2
]}

Cosendey, Gatien ^{[2
]}

Butte, Raphael ^{[2
]}

Grandjean, Nicolas ^{[2
]}

机构：

[1] Univ Magdeburg, Inst Expt Phys, D-39106 Magdeburg, Germany

[2] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 03期

关键词：

THICKNESS; GAN;

D O I：

10.1063/1.4890670

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system. (C) 2014 AIP Publishing LLC.

引用

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