Integrating 3D PIN Germanium Detectors with High-k ALD Fabricated Slot Waveguides

被引：0

作者：

Naiini, Maziar M. ^{[1
]}

Radamson, Henry H. ^{[1
]}

Malm, Gunnar ^{[1
]}

Ostling, Mikael ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, SE-164 Kista, Sweden

来源：

2014 15TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS) | 2014年

关键词：

CMOS technology; germanium photodetectors; optical interconnects; photonics integrated circuits(PIC); slot waveguides; silicon photonics; SILICON; PHOTODETECTOR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel device technology for photonics integrated circuits (PICs) is presented. In this work germanium PIN photodetectors are embedded in back-end deposited high-k slot waveguides. The waveguides are fabricated using chemical vapor deposited amorphous silicon and atomic layer deposition of Al2O3 thin films. The germanium PIN stack is selectively grown on a bulk silicon substrate. The detectors are butt coupled to the slot waveguides. Using our selective germanium growth and interconnect technology we study a 3D multilayer photonic integration for CMOS back-end of the line (BEOL) process. Finally we demonstrate the fabrication of a photonic chip deploying this technology platform.

引用

页码：45 / 48

页数：4

共 4 条

[1] ALD high-k layer grating couplers for single and double slot on-chip SOI photonics
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[4] A stable metallic 3D porous BPC2 as a universal anode material for Li, Na, and K ion batteries with high performance
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