Toward fabrication of graphene based devices: graphene transfer, processing, and characterization

被引：0

作者：

Istrate, Anca-Ionela ^{[1
]}

Veca, Monica ^{[1
]}

Nastase, Florin ^{[1
]}

Baracu, Angela ^{[1
]}

Gavrila, Raluca ^{[1
]}

Comanescu, Florin ^{[1
]}

机构：

[1] Natl Inst Res & Dev Microtechnol IMT Bucharest, CENASIC Res Ctr Integrated Syst Nanotechnol & Car, Voluntari, Romania

来源：

2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS) | 2016年

关键词：

graphene; transfer; electrochemical delamination; recyclability; graphene-Si junction; FIELD; ELECTRODES; FILM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current work presents our group's progress toward a graphene transfer and graphene-Si junctions. We perform graphene transfer from copper to SiO2/Si and Si substrate using electrochemical delamination. We processed and characterized graphene on SiO2/Si and Si. Finally we manufactured several junctions with graphene-Si. The I-V curve is symmetric with respect to the bias voltage, therefore one can infer that there is no Schottky contact at the interface. For larger bias voltages, the I-V characteristics are non-linear of second order.

引用

页码：159 / 162

页数：4

共 11 条

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