A novel capacitive-type humidity sensor using CMOS fabrication technology

被引:128
作者
Gu, L [1 ]
Huang, QA [1 ]
Qin, M [1 ]
机构
[1] SE Univ, Key Lab MEMS, Minist Educ China, Nanjing 210096, Peoples R China
关键词
CMOS sensor; humidity sensor; capacitive sensor; reliability; polyimide film;
D O I
10.1016/j.snb.2003.12.060
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This paper reports a novel capacitive humidity sensor integrated on a polysilicon heater. The sensor was fabricated with the industrial standard CMOS process to achieve a cost-effective solution for accurate and reliability. The sensing material polyimide was obtained by a post-processing step after the standard CMOS fabrication. The sensing principle of the sensor is based on the dielectric constant change of deposited polyimide due to absorption/desorption of vapor. The passivation (silicon nitride) layer with no limitations to the electrode selection is between the electrode and sensing material in order to improve the reliability of the relative humidity for the sensors. The humidity sensor was measured to show a linear dependence on the relative humidity in the range of 20-70%, the maximum hysteresis is 3%. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:491 / 498
页数:8
相关论文
共 13 条
  • [1] Thermoelement humidity sensor
    Berlicki, TM
    Murawski, E
    Muszynski, M
    Osadnik, SJ
    Prociow, EL
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1998, 64 (03) : 213 - 217
  • [2] Environmental sensors based on micromachined cantilevers with integrated read-out
    Boisen, A
    Thaysen, J
    Jensenius, H
    Hansen, O
    [J]. ULTRAMICROSCOPY, 2000, 82 (1-4) : 11 - 16
  • [3] HIGH-SENSITIVITY CMOS HUMIDITY SENSORS WITH ON-CHIP ABSOLUTE CAPACITANCE MEASUREMENT SYSTEM
    BOLTSHAUSER, T
    LEME, CA
    BALTES, H
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1993, 15 (1-3) : 75 - 80
  • [4] Design studies on piezoresistive humidity sensors
    Buchhold, R
    Nakladal, A
    Gerlach, G
    Neumann, P
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1998, 53 (1-2) : 1 - 7
  • [5] Fabrication of single crystal Si cantilevers using a dry release process and application in a capacitive-type humidity sensor
    Chatzandroulis, S
    Tserepi, A
    Goustouridis, D
    Normand, P
    Tsoukalas, D
    [J]. MICROELECTRONIC ENGINEERING, 2002, 61-2 : 955 - 961
  • [6] DENTON DD, 1990, P 33 MIDW S IEEE CIR, V2, P854
  • [7] A high-sensitivity polyimide capacitive relative humidity sensor for monitoring anodically bonded hermetic micropackages
    Dokmeci, M
    Najafi, K
    [J]. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2001, 10 (02) : 197 - 204
  • [8] A high-speed capacitive humidity sensor with on-chip thermal reset
    Kang, US
    Wise, KD
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (04) : 702 - 710
  • [9] MULTIPURPOSE INTERFACE FOR SENSOR SYSTEMS FABRICATED BY CMOS TECHNOLOGY WITH POST-PROCESSING
    LEME, CA
    BALTES, H
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 : 77 - 81
  • [10] A CMOS humidity sensor with on-chip calibration
    Qiu, YY
    Azeredo-Leme, C
    Alcácer, LR
    Franca, JE
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 2001, 92 (1-3) : 80 - 87