Optical feedback in 905nm power laser-thyristors based on AlGaAs/GaAs heterostructures

被引：12

作者：

Podoskin, A. A. ^{[1
]}

Soboleva, O. S. ^{[1
]}

Zakharov, M. S. ^{[1
]}

Veselov, D. A. ^{[1
]}

Zolotarev, V. V. ^{[1
]}

Pikhtin, N. A. ^{[1
]}

Tarasov, I. S. ^{[1
]}

Bagaev, T. A. ^{[2
]}

Ladugin, M. A. ^{[2
]}

Marmalyuk, A. A. ^{[2
]}

Simakov, V. A. ^{[2
]}

Slipchenko, S. O. ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Stelmakh Res & Dev Inst Polyus, Moscow 117342, Russia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 12期

基金：

俄罗斯科学基金会;

关键词：

laser-thyristor; laser diode; heterophototransistor; optical feedback; optical activation; ABSORPTION-COEFFICIENT; N-TYPE; GAAS; EFFICIENCY;

D O I：

10.1088/0268-1242/30/12/125011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental study of factors determining the optical feedback efficiency in the structure of a laser-thyristor emitting at a wavelength of 905 nm has been carried out. It is shown that the spontaneous emission spectrum undergoes a significant change in the working range of currents due to the presence of GaAs-spacers in the structure of the active region of the laser part and to the absence of saturation of the spontaneous emission flux beyond the lasing threshold. It is demonstrated that the influence exerted by the reverse voltage across the collector p-n junction of the transistor part comes down to the following two effects: deformation of the edge of the absorption spectrum and turn-on of the impact ionization. Experimental dependences of the photogeneration rate on both current and voltage were obtained for the p-base of the transistor part. These dependences are an important tool to be used in subsequent studies aimed to simulate and examine the injection and generation processes in power laser-thyristors.

引用

页数：6

共 37 条

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