Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions

被引：19

作者：

Kuboyama, Satoshi ^{[1
]}

Mizuta, Eiichi ^{[1
]}

Nakada, Yuki ^{[1
]}

Shindou, Hiroyuki ^{[1
]}

Michez, Alain ^{[2
]}

Boch, Jerome ^{[2
]}

Saigne, Frederic ^{[2
]}

Touboul, Antoine ^{[2
]}

机构：

[1] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan

[2] Univ Montpellier, Inst Elect & Syst, F-34095 Montpellier, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2019年 / 66卷 / 07期

关键词：

Radiation damage; SiC Schottky barrier diode (SBD); single-event burnout; thermal runaway; MOBILITY; SIMULATION; DAMAGE; 4H;

D O I：

10.1109/TNS.2019.2914494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal runaway in SiC Schottky barrier diodes (SBDs) caused by heavy ions was identified by a device simulator with parameters carefully extrapolated to an extended temperature range far exceeding the melting point of SiC. It is shown that the critical electric field needed to activate the impact ionization attributable to SiC material and the Schottky barrier contact on it are responsible for the thermal runaway in SiC SBDs.

引用

页码：1688 / 1693

页数：6

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