S-band low power consumption amplifier for RFID applications

被引：0

作者：

Wen, GJ ^{[1
]}

Li, JY ^{[1
]}

Ge, B ^{[1
]}

Li, TM ^{[1
]}

Yu, XY ^{[1
]}

Look, LC ^{[1
]}

Shen, ZX ^{[1
]}

Aditya, S ^{[1
]}

Chao, L ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Coll Phys Elect, Chengdu 610054, Sichuan, Peoples R China

来源：

6TH WORLD MULTICONFERENCE ON SYSTEMICS, CYBERNETICS AND INFORMATICS, VOL XV, PROCEEDINGS: MOBILE/WIRELESS COMPUTING AND COMMUNICATION SYSTEMS III | 2002年

关键词：

hybrid microwave integrated circuit; radio frequency identification; communication; amplifier; low noise amplifier;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A three-stage cascode low-power consumption high-gain HMIC LNA for radio frequency identification applications operating at 2.45GHz, has been demonstrated. Under low dc power bias of 3.0V and 0.46mA, the amplifier demonstrated the state-of-the-art performance with a gain of 30.34dB, input and output return losses of less than -10dB, NF of 4.18dB and the corresponding -1 dB compression point of -19.1dBm at 2.45GHz, achieving a Gain/P-dc figure of merit of 21.99dB/mW and a Gain/NF.P-dc ratio of 5.26/mW. The approach to design amplifier that can simultaneously provide low-power consumption, high gain, low noise figure and low VSWR, is presented in this paper.

引用

页码：498 / 503

页数：6

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