S-band low power consumption amplifier for RFID applications

被引:0
|
作者
Wen, GJ [1 ]
Li, JY [1 ]
Ge, B [1 ]
Li, TM [1 ]
Yu, XY [1 ]
Look, LC [1 ]
Shen, ZX [1 ]
Aditya, S [1 ]
Chao, L [1 ]
机构
[1] Univ Elect Sci & Technol China, Coll Phys Elect, Chengdu 610054, Sichuan, Peoples R China
关键词
hybrid microwave integrated circuit; radio frequency identification; communication; amplifier; low noise amplifier;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
A three-stage cascode low-power consumption high-gain HMIC LNA for radio frequency identification applications operating at 2.45GHz, has been demonstrated. Under low dc power bias of 3.0V and 0.46mA, the amplifier demonstrated the state-of-the-art performance with a gain of 30.34dB, input and output return losses of less than -10dB, NF of 4.18dB and the corresponding -1 dB compression point of -19.1dBm at 2.45GHz, achieving a Gain/P-dc figure of merit of 21.99dB/mW and a Gain/NF.P-dc ratio of 5.26/mW. The approach to design amplifier that can simultaneously provide low-power consumption, high gain, low noise figure and low VSWR, is presented in this paper.
引用
收藏
页码:498 / 503
页数:6
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