Transparent conductive Al-doped ZnO films for liquid crystal displays

被引：243

作者：

Oh, Byeong-Yun

Jeong, Min-Chang

Moon, Tae-Hyoung

Lee, Woong

Myoung, Jae-Min

Hwang, Jeoung-Yeon

Seo, Dae-Shik

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 12期

关键词：

D O I：

10.1063/1.2206417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al-doped zinc oxide (ZnO:Al) films were applied to liquid crystal displays (LCDs) as transparent electrodes substituting indium tin oxide (ITO). While the ZnO:Al-based twisted nematic LCD cell showed similar operational behavior to ITO-based counterpart, its electro-optical (EO) and residual dc (r-dc) characteristics were somewhat improved. Capacitance-voltage relations suggested that these improved EO and r-dc characteristics of the ZnO:Al-based LCD cell are due to the substantially lower density of charge carrier trapping centers in the polyimide layer/electrode interface region, demonstrating high application potential of ZnO:Al films as transparent electrodes of LCDs.

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页数：4

相关论文

共 17 条

[1] High transmittance low resistivity ZnO:Ga films by laser ablation [J].

Hirata, GA ;

McKittrick, J ;

Siqueiros, J ;

Lopez, OA ;

Cheeks, T ;

Contreras, O ;

Yi, JY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :791-794

[2]

HORI T, 1997, GATE DIELECTRICS MOS, P42

[3] TEXTURED ALUMINUM-DOPED ZINC-OXIDE THIN-FILMS FROM ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR DEPOSITION [J].

HU, JH ;

GORDON, RG .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) :880-890

[4] Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices [J].

Jiang, X ;

Wong, FL ;

Fung, MK ;

Lee, ST .

APPLIED PHYSICS LETTERS, 2003, 83 (09) :1875-1877

[5] Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices [J].

Kim, H ;

Gilmore, CM ;

Piqué, A ;

Horwitz, JS ;

Mattoussi, H ;

Murata, H ;

Kafafi, ZH ;

Chrisey, DB .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6451-6461

[6] Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices [J].

Kim, H ;

Gilmore, CM ;

Horwitz, JS ;

Piqué, A ;

Murata, H ;

Kushto, GP ;

Schlaf, R ;

Kafafi, ZH ;

Chrisey, DB .

APPLIED PHYSICS LETTERS, 2000, 76 (03) :259-261

[7] MECHANISM OF CARRIER TRANSPORT IN HIGHLY EFFICIENT SOLAR-CELLS HAVING INDIUM TIN OXIDE SI JUNCTIONS [J].

KOBAYASHI, H ;

ISHIDA, T ;

NAKATO, Y ;

TSUBOMURA, H .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) :1736-1743

[8] Dielectric relaxation of atomic-layer-deposited HfO2 thin films from 1 kHz to 5 GHz -: art. no. 012901 [J].

Lee, B ;

Moon, T ;

Kim, TG ;

Choi, DK ;

Park, B .

APPLIED PHYSICS LETTERS, 2005, 87 (01)

[9] EFFECT OF HYDROGEN PLASMA TREATMENT ON TRANSPARENT CONDUCTING OXIDES [J].

MAJOR, S ;

KUMAR, S ;

BHATNAGAR, M ;

CHOPRA, KL .

APPLIED PHYSICS LETTERS, 1986, 49 (07) :394-396

[10] Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition [J].

Moriga, T ;

Mikawa, M ;

Sakakibara, Y ;

Misaki, Y ;

Murai, K ;

Nakabayashi, I ;

Tominaga, K ;

Metson, JB .

THIN SOLID FILMS, 2005, 486 (1-2) :53-57