Characterization of semiconductor materials using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy

被引:63
作者
Hermann, Peter [1 ]
Hoehl, Arne [1 ]
Ulrich, Georg [2 ]
Fleischmann, Claudia [3 ]
Hermelink, Antje [4 ]
Kaestner, Bernd [1 ]
Patoka, Piotr [2 ]
Hornemann, Andrea [1 ]
Beckhoff, Burkhard [1 ]
Ruehl, Eckart [2 ]
Ulm, Gerhard [1 ]
机构
[1] Phys Tech Bundesanstalt, D-10587 Berlin, Germany
[2] Free Univ Berlin, Inst Chem & Biochem, Phys & Theoret Chem, D-14195 Berlin, Germany
[3] IMEC, B-3001 Leuven, Belgium
[4] Robert Koch Inst, D-13353 Berlin, Germany
关键词
OPTICAL MICROSCOPY; SPATIAL-RESOLUTION; TIP; SCATTERING; NANOWIRES; NANOSCOPY; SCALE; ABSORPTION; PLASMONS; SIGNALS;
D O I
10.1364/OE.22.017948
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We describe the application of scattering-type near-field optical microscopy to characterize various semiconducting materials using the electron storage ring Metrology Light Source (MLS) as a broadband synchrotron radiation source. For verifying high-resolution imaging and nano-FTIR spectroscopy we performed scans across nanoscale Si-based surface structures. The obtained results demonstrate that a spatial resolution below 40 nm can be achieved, despite the use of a radiation source with an extremely broad emission spectrum. This approach allows not only for the collection of optical information but also enables the acquisition of near-field spectral data in the mid-infrared range. The high sensitivity for spectroscopic material discrimination using synchrotron radiation is presented by recording near-field spectra from thin films composed of different materials used in semiconductor technology, such as SiO2, SiC, SixNy, and TiO2. (C) 2014 Optical Society of America
引用
收藏
页码:17948 / 17958
页数:11
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