Characterization of semiconductor materials using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy

被引：63

作者：

Hermann, Peter ^{[1
]}

Hoehl, Arne ^{[1
]}

Ulrich, Georg ^{[2
]}

Fleischmann, Claudia ^{[3
]}

Hermelink, Antje ^{[4
]}

Kaestner, Bernd ^{[1
]}

Patoka, Piotr ^{[2
]}

Hornemann, Andrea ^{[1
]}

Beckhoff, Burkhard ^{[1
]}

Ruehl, Eckart ^{[2
]}

Ulm, Gerhard ^{[1
]}

机构：

[1] Phys Tech Bundesanstalt, D-10587 Berlin, Germany

[2] Free Univ Berlin, Inst Chem & Biochem, Phys & Theoret Chem, D-14195 Berlin, Germany

[3] IMEC, B-3001 Leuven, Belgium

[4] Robert Koch Inst, D-13353 Berlin, Germany

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 15期

关键词：

OPTICAL MICROSCOPY; SPATIAL-RESOLUTION; TIP; SCATTERING; NANOWIRES; NANOSCOPY; SCALE; ABSORPTION; PLASMONS; SIGNALS;

D O I：

10.1364/OE.22.017948

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We describe the application of scattering-type near-field optical microscopy to characterize various semiconducting materials using the electron storage ring Metrology Light Source (MLS) as a broadband synchrotron radiation source. For verifying high-resolution imaging and nano-FTIR spectroscopy we performed scans across nanoscale Si-based surface structures. The obtained results demonstrate that a spatial resolution below 40 nm can be achieved, despite the use of a radiation source with an extremely broad emission spectrum. This approach allows not only for the collection of optical information but also enables the acquisition of near-field spectral data in the mid-infrared range. The high sensitivity for spectroscopic material discrimination using synchrotron radiation is presented by recording near-field spectra from thin films composed of different materials used in semiconductor technology, such as SiO2, SiC, SixNy, and TiO2. (C) 2014 Optical Society of America

引用

页码：17948 / 17958

页数：11

共 56 条

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