About Ge(Mn) diluted magnetic semiconductor

被引：2

作者：

Portavoce, A. ^{[1
]}

Bertaina, S. ^{[1
]}

Abbes, O. ^{[2
]}

Chow, L. ^{[3
]}

Le Thanh, V. ^{[4
]}

机构：

[1] Fac Sci St Jerome Case 142, CNRS, IM2NP, F-13397 Marseille, France

[2] Aix Marseille Univ, IM2NP, Marseille, France

[3] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[4] Aix Marseille Univ, CINAM, F-13288 Marseille, France

来源：

MATERIALS LETTERS | 2014年 / 119卷

关键词：

Germanium; Magnesium; Diluted magnetic semiconductor; Spintronics; RESONANCE;

D O I：

10.1016/j.matlet.2014.01.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deposition of 0.5 monolayer of Mn by molecular beam epitaxy on the surface of a Ge(0 0 1) substrate, and annealing, allowed the fabrication of a cluster-free Ge(Mn) diluted solution. Electronic spin resonance (ESR) was used to study the magnetic properties of this solution. These measurements, combined with secondary ion mass spectrometry, atomic force microscopy, and Auger electron spectroscopy, show that the detected ferromagnetic signal is due to surface islands, while Mn atoms on Ge substitutional sites gives no detectable ESR signal. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：68 / 70

页数：3

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