N2-H2 remote plasma nitridation for GaAs surface passivation

被引：42

作者：

Losurdo, M

Capezzuto, P

Bruno, G

Perna, G

Capozzi, V

机构：

[1] CNR, IMIP, I-70126 Bari, Italy

[2] Univ Bari, Dipartimento Interateneo Fis, I-70126 Bari, Italy

[3] INFM, Unita Bari, Bari, Italy

[4] Univ Foggia, Fac Med & Chirurg, Foggia, Italy

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 01期

关键词：

D O I：

10.1063/1.1490414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A remote N-2-H-2 (a mixture of 97% N-2-3% H-2) rf plasma nitridation procedure has been developed to form a very thin (similar to5A) GaN layer successful in the electronic and chemical passivation of GaAs (100) surfaces. The interaction of the plasma with the GaAs surface has been controlled in situ and in real time by spectroscopic ellipsometry. The stability of the chemical and electronic passivation is demonstrated by the nonoxidation and by the nondecaying behavior of the photoluminescence efficiency of the GaAs passivated surface over months of air exposure. (C) 2002 American Institute of Physics.

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页码：16 / 18

页数：3

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