Dark current characteristics of GaAs-based 2.6 μm InGaAs photodetectors on different types of InAlAs buffer layers

被引：22

作者：

Zhou, L. ^{[1
]}

Zhang, Y. G. ^{[1
]}

Chen, X. Y. ^{[1
]}

Gu, Y. ^{[1
]}

Li, H. S. B. Y. ^{[1
]}

Cao, Y. Y. ^{[1
]}

Xi, S. P. ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2014年 / 47卷 / 08期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

photodetector; InGaAs; GaAs substrate; dark current; EXTENDED-WAVELENGTH INGAAS; DETECTORS; ARRAYS;

D O I：

10.1088/0022-3727/47/8/085107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs-based In0.83Ga0.17As photodetectors (PDs) with cut-off wavelengths up to 2.6 mu m are demonstrated. The effects of continuously-graded or fixed-composition InAlAs buffers on the device performances are investigated. The dark current characteristics of the PDs at various temperatures are analysed in detail. The photocurrents are also measured at 300 K; the detectivity of the PDs is extracted. The two GaAs-based PDs with different buffer schemes show different temperature-dependent dark current behaviours. The around room temperature performances of the GaAs-based device on the fixed-composition buffer are not as good, but comparable to those of InP-based devices, revealing a promising candidate for the GaAs-based PDs and focal plane arrays for many low-end applications.

引用

页数：4

共 3 条

[1] Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors
Chen, X. Y.
Gu, Y.
Zhang, Y. G.
Xi, S. P.
Guo, Z. X.
Zhou, L.
Li, A. Z.
Li, Hsby.
JOURNAL OF CRYSTAL GROWTH, 2015, 425 : 346 - 350
[2] Influence of buffer layer and processing on the dark current of 2.5μm-wavelength 2%-mismatched InGaAs photodetectors
D'Hondt, M
Moerman, I
Van Daele, P
Demeester, P
IEE PROCEEDINGS-OPTOELECTRONICS, 1997, 144 (05): : 277 - 282
[3] Photo-and-dark-current-voltage characteristics of normal-incidence GaAs photodetectors with two types of electrode configurations
Liu, Xiuhuan
Li, Mingli
Chen, Zhanguo
Jia, Gang
Bian, Tianliang
Li, Yi
SELECTED PAPERS FROM CONFERENCES OF THE PHOTOELECTRONIC TECHNOLOGY COMMITTEE OF THE CHINESE SOCIETY OF ASTRONAUTICS 2014, PT II, 2015, 9522

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