Non-stoichiometric silicon oxide deposited at low gaseous N2O/SiH4 ratios

Semi-insulating polycrystalline silicon films were deposited using different N2O/SiH4 ratios, different pressures, at 650 and 700 degreesC, in a low-pressure chemical vapor deposition furnace. The deposition rate of the films increased with increasing pressure, increasing temperature and decreasing N2O/SiH4 ratio. At higher N2O/SiH4 ratios, more oxygen is incorporated in the film. Oxygen rich films had lower conductivities and lower dielectric constants than silicon rich films. The annealing of the films, at only 430 degreesC, decreased the conductivity indicating that more silicon-oxygen bonds are formed. The films also proved to be photoconductive. (C) 2003 Elsevier B.V. All rights reserved.