Growth of high-quality GaN on (100) Ga2O3 substrates by facet-controlled MOVPE

被引：8

作者：

Hossain, Emroj ^{[1
]}

Rahman, A. Azizur ^{[1
]}

Gokhale, Mahesh ^{[1
]}

Kulkarni, Ruta ^{[1
]}

Mondal, Rajib ^{[1
]}

Thamizhavel, Arumugam ^{[1
]}

Bhattacharya, Arnab ^{[1
]}

机构：

[1] Tata Inst Fundamental Res, Homi Bhabha Rd, Mumbai 400005, Maharashtra, India

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 524卷

关键词：

Metalorganic vapor phase epitaxy; Semiconducting gallium compounds; Nitrides; Oxides; Substrates; BETA-GA2O3; SINGLE-CRYSTALS; EPITAXIAL-GROWTH; GALLIUM NITRIDE;

D O I：

10.1016/j.jcrysgro.2019.125165

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report a comprehensive study of the growth of GaN layers on (1 0 0)-oriented Ga2O3 substrates by metalorganic vapour phase epitaxy (MOVPE), especially the improvement on using an intermediate facet-control layer between the low-temperature buffer and the high-temperature GaN layer compared to the usual two-step growth process. We examined in detail the effects of substrate nitridation, carrier gas, and variation of the thickness of the low-temperature buffer GaN layer, and the thickness and growth temperature of the facet layer. This optimization allowed us to obtain GaN layers on (1 0 0)-oriented Ga2O3 with high structural and optical quality, as shown by high-resolution X-ray diffraction, electron microscopy, optical absorption, and luminescence measurements.

引用

页数：5

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