An Investigation of Electrical and Dielectric Parameters of Sol-Gel Process Enabled β-Ga2O3 as a Gate Dielectric Material

被引：32

作者：

Kaya, Ahmet ^{[1
]}

Mao, Howard ^{[1
]}

Gao, Jianyi ^{[1
]}

Chopdekar, Rajesh V. ^{[2
]}

Takamura, Yayoi ^{[2
]}

Chowdhury, Srabanti ^{[1
]}

Islam, M. Saif ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

[2] Univ Calif Davis, Dept Mat Sci & Engn, Davis, CA 95616 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 05期

关键词：

beta-Ga2O3 dielectric film; dielectric properties; electrical properties; IMPEDANCE SPECTROSCOPY; GALLIUM OXIDE; RELAXATION; LAYER; FILMS; CONDUCTIVITY;

D O I：

10.1109/TED.2017.2675990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, beta-Ga2O3 thin films were grown on a p-Si substrate using the sol-gel method. Structural characterization of the films was performed using X-ray diffraction. Electrical parameters such as breakdown field, interface traps density (D-it), and series resistance (R-s) were investigated at room temperature. The interface trap density was found to be 10(12) eV(-1)cm(-2) using the Hill-Colemanmethod. This result is valuable forMOS capacitor applications. Dielectric parameters were investigated in the wide frequency range (20 kHz-1 MHz) at room temperature. We observed that these parameters have a strong dependence on frequency and voltage.

引用

页码：2047 / 2053

页数：7

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