An Investigation of Electrical and Dielectric Parameters of Sol-Gel Process Enabled β-Ga2O3 as a Gate Dielectric Material

被引：34

作者：

Kaya, Ahmet ^{[1
]}

Mao, Howard ^{[1
]}

Gao, Jianyi ^{[1
]}

Chopdekar, Rajesh V. ^{[2
]}

Takamura, Yayoi ^{[2
]}

Chowdhury, Srabanti ^{[1
]}

Islam, M. Saif ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

[2] Univ Calif Davis, Dept Mat Sci & Engn, Davis, CA 95616 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 05期

关键词：

beta-Ga2O3 dielectric film; dielectric properties; electrical properties; IMPEDANCE SPECTROSCOPY; GALLIUM OXIDE; RELAXATION; LAYER; FILMS; CONDUCTIVITY;

D O I：

10.1109/TED.2017.2675990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, beta-Ga2O3 thin films were grown on a p-Si substrate using the sol-gel method. Structural characterization of the films was performed using X-ray diffraction. Electrical parameters such as breakdown field, interface traps density (D-it), and series resistance (R-s) were investigated at room temperature. The interface trap density was found to be 10(12) eV(-1)cm(-2) using the Hill-Colemanmethod. This result is valuable forMOS capacitor applications. Dielectric parameters were investigated in the wide frequency range (20 kHz-1 MHz) at room temperature. We observed that these parameters have a strong dependence on frequency and voltage.

引用

页码：2047 / 2053

页数：7

共 47 条

[1] Free-standing gallium nitride membrane-based sensor for the impedimetric detection of alcohols [J].

Alifragis, Y. ;

Roussos, G. ;

Pantazis, A. K. ;

Konstantinidis, G. ;

Chaniotakis, N. .

JOURNAL OF APPLIED PHYSICS, 2016, 119 (07)

[2] Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride [J].

Allen, Thomas G. ;

Wan, Yimao ;

Cuevas, Andres .

IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 6 (04) :900-905

[3]

Altindal S, 2012, J OPTOELECTRON ADV M, V14, P998

[4]

Altuntus H., 2014, J VAC SCI TECHNOL A, V32, P190

[5] Flexible micro supercapacitors based on laser-scribed graphene/ZnO nanocomposite [J].

Amiri, Morteza Hassanpour ;

Namdar, Naser ;

Mashayekhi, Alireza ;

Ghasemi, Foad ;

Sanaee, Zeinab ;

Mohajerzadeh, Shams .

JOURNAL OF NANOPARTICLE RESEARCH, 2016, 18 (08)

[6]

[Anonymous], 1978, Metal-Semiconductors Contacts

[7] Frequency and temperature dependence dielectric study of strontium modified Barium Zirconium Titanate ceramics obtained by mechanochemical synthesis [J].

Badapanda, T. ;

Sarangi, S. ;

Parida, S. ;

Behera, B. ;

Ojha, B. ;

Anwar, S. .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (05) :3069-3082

[8] Thermal decomposition of gallium nitrate hydrate Ga(NO3)3•xH2O [J].

Berbenni, V ;

Milanese, C ;

Bruni, G ;

Marini, A .

JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY, 2005, 82 (02) :401-407

[9] Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor [J].

Besleaga, C. ;

Stan, G. E. ;

Pintilie, I. ;

Barquinha, P. ;

Fortunato, E. ;

Martins, R. .

APPLIED SURFACE SCIENCE, 2016, 379 :270-276

[10] SPACE-CHARGE RELAXATION IN PEROVSKITES [J].

BIDAULT, O ;

GOUX, P ;

KCHIKECH, M ;

BELKAOUMI, M ;

MAGLIONE, M .

PHYSICAL REVIEW B, 1994, 49 (12) :7868-7873

← 1 2 3 4 5 →