Dielectric and Piezoelectric Properties of Microwave Sintered Ba1-xRexTiO3 Ceramics

被引：11
作者：
Mahboob, Syed [1 ]
Rizwana [2 ]
Prasad, G. [1 ]
Kumar, G. S. [1 ]
机构：
[1] Osmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Telengana State, India
[2] Inst Aeronaut Engn, Hyderabad 500043, Andhra Pradesh, India
来源：
FERROELECTRICS | 2015年 / 486卷 / 01期
关键词：
Dielectric; piezoelectric; impedance; grain and grain boundary resistance; PHASE-TRANSITION; BARIUM; LA;
D O I：
10.1080/00150193.2015.1100922
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Lead free piezoelectric ceramic Ba1-xRexTiO3 (Re = Ce and Pr with x = 0.003) were prepared through microwave sintering route using 5% SiO2 as sintering aid. The dielectric, impedance and piezoelectric properties were studied over a wide range of temperature. Pr doped barium titanate showed higher value of dielectric constant around 15,099. The electromechanical coupling factors at 225 degrees C are 0.9985 and 0.9978 for Ce and Pr doped barium titanate ceramics respectively. The d33 values for Ce and Pr doped barium titanate ceramics at 225 degrees C are 368 nm. V-1 and 470 nm. V-1 respectively. The d(33) value decreased with the increase of temperature and the values at 600 degrees C are 10 nm. V-1 and 8 nm. V-1 for Ce and Pr doped barium titanate ceramics respectively.
引用
收藏
页码：175 / 183
页数：9
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