Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth-product

被引：63

作者：

Zaoui, Wissem Sfar ^{[1
]}

Chen, Hui-Wen ^{[1
]}

Bowers, John E. ^{[1
]}

Kang, Yimin ^{[2
]}

Morse, Mike ^{[2
]}

Paniccia, Mario J. ^{[2
]}

Pauchard, Alexandre

Campbell, Joe C. ^{[3
]}

机构：

[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA

[2] Intel Corp, Santa Clara, CA 95054 USA

[3] Univ Virginia, ECE Dept, Charlottesville, VA 22904 USA

来源：

OPTICS EXPRESS | 2009年 / 17卷 / 15期

关键词：

Electric fields - Bandwidth - Frequency response - Avalanche photodiodes;

D O I：

10.1364/OE.17.012641

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced gain-bandwidth-product of 845GHz at a wavelength of 1310nm. The corresponding gain value is 65 and the electrical bandwidth is 13GHz at an optical input power of -30dBm. The unconventional high gain-bandwidth-product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced gain-bandwidth-product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields. (C) 2009 Optical Society of America

引用

页码：12641 / 12649

页数：9

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