Hydrogen in Ag-doped ZnO: Theoretical calculations

被引:25
作者
He, H. Y. [1 ]
Hu, J.
Pan, B. C.
机构
[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
基金
美国国家科学基金会;
关键词
bonds (chemical); carrier density; density functional theory; dissociation; hydrogen; II-VI semiconductors; phonons; semiconductor doping; silver; vibrational modes; wide band gap semiconductors; zinc compounds; MINIMUM ENERGY PATHS; ELASTIC BAND METHOD; THIN-FILMS; OPTICAL-PROPERTIES; SADDLE-POINTS; ZINC-OXIDE; BULK ZNO; DEPOSITION; DONOR; ORDER;
D O I
10.1063/1.3146793
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Based on density functional theory calculations, we systematically investigate the behaviors of a H atom in Ag-doped ZnO involving the preference sites, diffusion behaviors, the electronic structures, and vibrational properties. We find that a H atom can migrate to the doped Ag to form a Ag-H complex by overcoming energy barriers of 0.3-1.0 eV. The lowest-energy site for H location is the bond center of a Ag-O in the basal plane. Moreover, H can migrate between this site and its equivalent sites with energy cost of less than 0.5 eV. In contrast, dissociation of such a Ag-H complex needs energy of about 1.1-1.3 eV. This implies that the Ag-H complexes can commonly exist in the Ag-doped ZnO, which have a negative effect on the desirable p-type carrier concentrations of Ag-doped ZnO. In addition, based on the frozen phonon calculation, the vibrational properties of ZnO with a Ag-H complex are predicted. Some new vibrational modes associated with the Ag-H complex present in the vibrational spectrum of the system.
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页数:5
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