Formation of a Bistable Interstitial Complex in Irradiated p-Type Silicon

被引:5
|
作者
Makarenko, Leonid F. [1 ]
Lastovski, Stanislav B. [2 ]
Yakushevich, Hanna S. [2 ]
Gaubas, Eugenijus [3 ]
Pavlov, Jevgenij [3 ]
Kozlovski, Vitali V. [4 ]
Moll, Michael [5 ]
Pintilie, Ioana [6 ]
机构
[1] Belarusian State Univ, Dept Appl Math & Comp Sci, Independence Ave 4, Minsk 220030, BELARUS
[2] NAS Belarus, Sci Pract Mat Res Ctr, Lab Radiat Effects, Minsk 220072, BELARUS
[3] Vilnius Univ, Inst Photon & Nanotechnol, Sauletekio Av 3, LT-10257 Vilnius, Lithuania
[4] Peter Great St Petersburg State Polytech Univ, Dept Expt Phys, St Petersburg 195251, Russia
[5] CERN, EP Dept, CH-1211 Geneva 23, Switzerland
[6] Natl Inst Mat Phys, Dept Multifunct Mat & Struct, Atomistilor Str 405A, Bucharest 077125, Romania
关键词
annealing; bistable center; deep level transient spectroscopy; radiation defect; recombination-enhanced reactions; silicon; OXYGEN; DEFECTS; CENTERS; DAMAGE;
D O I
10.1002/pssa.201900354
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of the injection of minority charge carriers on the formation of a divalent bistable defect (DBH) having two energy levels of E-v + 0.44 eV and E-v + 0.53 eV in its metastable configuration is investigated. Using forward current injection, the formation temperature of this defect in p-type silicon can be lowered by about 50 degrees C. The production of such bistable defect is enhanced in materials with a high ratio of boron to carbon concentrations. This allows one to conclude that the boron atom is one of the constituents of the defect under study. There is also a correlation between the behavior of the bistable hole traps and a metastable electron trap observed earlier. It is concluded that these traps are related to metastable and stable configurations of the DBH defect, which has inverse occupancy level ordering in its stable configuration.
引用
收藏
页数:9
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