Crystal growth and properties of scandium nitride

被引：46

作者：

Gu, Z

Edgar, JH

Pomeroy, J

Kuball, M

Coffey, DW

机构：

[1] Kansas State Univ, Dept Chem Engn, Manhattan, KS 66506 USA

[2] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[3] Oak Ridge Natl Lab, High Temp Mat Lab, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2004年 / 15卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1023/B:JMSE.0000032591.54107.2c

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ScN crystals were grown on tungsten foil by sublimation-recondensation method in the temperature range of 1840-2060degreesC, pressure range of 15-230 Torr under a nitrogen atmosphere. The growth rate increased exponentially with temperature with activation energy of 456.0 KJ/mol, and it was inversely proportional to pressure. The maximum growth rate was 79.292 mg/h at 2060degreesC under 25 Torr. Characterization methods confirmed the rock salt crystal structure with a lattice constant of 4.5005 Angstrom. (C) 2004 Kluwer Academic Publishers.

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收藏

页码：555 / 559

页数：5

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