Turn-Off Behavior of 1.2 kV/25 A NPT-CIGBT Under Clamped Inductive Load Switching

被引：7

作者：

Kong, Soon Tat ^{[1
]}

Ngwendson, Luther-King ^{[1
]}

Sweet, Mark ^{[1
]}

Kumar, Dinesh ^{[1
]}

Narayanan, Ekkanath Madathil Sankara ^{[1
]}

机构：

[1] Univ Sheffield, Sheffield S10 2TN, S Yorkshire, England

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2009年 / 24卷 / 3-4期

关键词：

Power semiconductor devices; power semiconductor switches; power transistors; OPTIMIZATION;

D O I：

10.1109/TPEL.2008.2007794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, this paper analyzes the turn-off behavior of the planar 1.2 kV/25, a nonpunch-through clustered insulated gate bipolar transistor (NPT-CIGBT) under clamped inductive load switching, in detail and through experiment simulation. Turn-off behavior of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied in order to observe the dI/dt, dV/dt, and turn-off energy loss of the device. Experimental results are shown at 25 degrees C and 125 degrees C. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGB turn-off process.

引用

页码：1100 / 1106

页数：7

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