Crystal Growth and X-ray Diffraction Characterization of Sb2Te3 Single Crystal

被引：5

作者：

Rajput, Indu ^{[1
]}

Rana, Sumesh ^{[1
]}

Jena, Rudra Prasad ^{[1
]}

Lakhani, Archana ^{[1
]}

机构：

[1] UGC DAE Consortium Sci Res, Univ Campus,Khandwa Rd, Indore 452001, Madhya Pradesh, India

来源：

PROF. DINESH VARSHNEY MEMORIAL NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS (NCPCM 2018) | 2019年 / 2100卷

关键词：

TOPOLOGICAL INSULATORS; QUANTUM OSCILLATIONS; SURFACE;

D O I：

10.1063/1.5098624

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the single crystal growth and X-ray diffraction characterization of bulk Sb2Te3 single crystal. Single crystal of Sb2Te3 was grown by modified Bridgman method. The diffraction peaks corresponding to {0, 0, 3} planesreveal the growth of crystal along the c-direction.X-ray diffraction analysis by rietveld refinement confirms and verifies the phase purity, rhombohedral structure and single crystalline nature of the prepared Sb2Te3 crystal .Unit cell structure of Sb2Te3 consist of three quintuple layers stacked one above the other.

引用

页数：4

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