Field-induced confined states in graphene

被引：20
|
作者：
Moriyama, Satoshi [1 ]
Morita, Yoshifumi [2 ]
Watanabe, Eiichiro [3 ]
Tsuya, Daiju [3 ]
机构：
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan
[2] Gunma Univ, Fac Engn, Kiryu, Gunma 3768515, Japan
[3] NIMS, Nanotechnol Innovat Stn, Tsukuba, Ibaraki 3050047, Japan
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期
关键词：
QUANTUM DOTS; TRANSISTOR;
D O I：
10.1063/1.4864074
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report an approach to confine the carriers in single-layer graphene, which leads to quantum devices with field-induced quantum confinement. We demonstrated that the Coulomb-blockade effect evolves under a uniform magnetic field perpendicular to the graphene device. Our experimental results show that field-induced quantum dots are realized in graphene, and a quantum confinement-deconfinement transition is switched by the magnetic field. (C) 2014 AIP Publishing LLC.
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页数：4
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