Power MOSFET active power cycling for medical system reliability assessment

被引:15
|
作者
Sow, Amadou [1 ,2 ]
Somaya, Sinivassane [1 ]
Ousten, Yves [2 ]
Vinassa, Jean-Michel [2 ]
Patoureaux, Fanny [1 ]
机构
[1] GE Healthcare, F-78533 Buc, France
[2] Univ Bordeaux, IMS Lab, F-33400 Talence, France
关键词
D O I
10.1016/j.microrel.2013.07.096
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High voltage generator is one of the critical subsystems of a medical system. So, a methodology assessing its reliability from component to system is proposed. In this context, N-channel power MOSFETs that are used in high frequency inverter for supplying high voltage transformer is tested. These MOSFETs are subjected to power cycling test in order to reveal thermo-mechanical failure modes and at the same time evaluate their lifetime using DoE. The test is done by using an external current supply to induce self-heating through the component. Heating and cooling phase are controlled by a logic controller. The ON state resistance (R-DSON) is monitored during the test as the failure indicator and different imaging methods are used for failure analysis and observed failures mechanism are discussed. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1697 / 1702
页数:6
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