Influence of deposition time on the properties of ZnS/p-Si heterostructures

被引：57

作者：

Kumar, Arun ^{[1
]}

Mukherjee, Samrat ^{[2
]}

Sahare, Sanjay ^{[3
]}

Choubey, Ravi Kant ^{[1
]}

机构：

[1] Amity Univ, Amity Inst Appl Sci AIAS, Dept Appl Phys, Noida Campus,Sect 125, Noida 201313, Uttar Pradesh, India

[2] Natl Inst Technol, Dept Phys, Patna 800005, Bihar, India

[3] Shenzhen Univ, Inst Adv Study, Shenzhen, Guangdong, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 122卷

关键词：

Chemical bath deposition; ZnS thin Films; Photoluminescence; Ideality factor; CURRENT-VOLTAGE CHARACTERISTICS; CDS THIN-FILMS; H-2; EVOLUTION; SOLAR-CELL; SCHOTTKY; LAYER; NANOPARTICLES; NANOSTRUCTURES; TEMPERATURE; DIODES;

D O I：

10.1016/j.mssp.2020.105471

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present work, ZnS/p-Si heterostructures have been prepared at different deposition durations using well known chemical bath deposition method. The structural, morphological and optical properties have been thoroughly investigated using x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, UV-visible and photoluminescence spectroscopy. The electrical studies of fabricated structures were carried out by studying the current-voltage (I-V) relation at 300 K. Using the I-V curve, important electrical parameters such as barrier height, saturation current and ideality factor have been calculated. The variation in electrical parameters of fabricated structures as a function of deposition time has been reported.

引用

页数：8

共 58 条

[1] Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition [J].