SP: An advanced surface-potential-based compact MOSFET model

被引：86
|
作者：
Gildenblat, G [1 ]
Wang, HL [1 ]
Chen, TL [1 ]
Gu, X [1 ]
Cai, XW [1 ]
机构：
[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 09期
关键词：
compact model; MOSFET; surface potential;
D O I：
10.1109/JSSC.2004.831604
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work describes an advanced physics-based compact MOSFET model (SP). Both the quasistatic and nonquasistatic versions of SP are surface-potential-based. The model is symmetric, includes the accumulation region, small-geometry effects, and has a consistent current and charge formulation. The surface potential is computed analytically and there are no iterative loops anywhere in the model. Availability of the surface potential in the source-drain overlap regions enables a physics-based formulation of the extrinsic model (e.g., gate tunneling current) and allows for a,noise model free of discontinuities or unphysical interpolation schemes. Simulation results are used to illustrate the interplay between the model structure and circuit design.
引用
收藏
页码：1394 / 1406
页数：13
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