Laser scattering defects in MBE-grown GaAs epitaxial layers related to dislocations in semi-insulating substrates

被引：0

作者：

Kiyama, M ^{[1
]}

Mukai, H ^{[1
]}

Yoshida, H ^{[1
]}

Sakurada, T ^{[1
]}

Nakai, R ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Itami, Hyogo 6640016, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 1-3期

关键词：

GaAs; MBE; scattering defect; microscopic PL;

D O I：

10.1016/S0022-0248(99)00681-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Scattering defects and microscopic PL in MBE-grown GaAs epitaxial layers on semi-insulating (SI) substrates with different dislocation density were studied by laser topography. The epitaxial layer on a lower-dislocation-density substrate (EPD = 4E3 cm(-2): grown by VB method) has about one order fewer scattering defects than that on a higher-dislocation-density substrate (EPD = 3E4 cm(-2): grown by LEC method), in which scattering defects were observed with cellular patterns like dislocation distribution in the substrate. PL characteristics are the same in the two epitaxial layers. The effects of these scattering defects on power devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：212 / 215

页数：4

共 11 条

[1] ARSENIC PRECIPITATION AT DISLOCATIONS IN GAAS SUBSTRATE MATERIAL [J].